The Indian Institute of Science (IISc) and Samsung Semiconductor India Research (SSIR) have joined hands to promote research and development (R&D) in the field of on-chip electrostatic discharge (ESD) protection. The research agreement was exchanged by Balajee Sowrirajan, corporate vice president and managing director, SSIR, Bengaluru, and Prof. Govindan Rangarajan, director, IISc, in the presence of delegates from Samsung and IISc.

According to IISc, the partnership seeks to build cutting-edge ESD device solutions to protect ultra-high-speed serial interfaces in advanced integrated circuits (ICs) and system-on-chip (SoC) products. The related research will be carried out by Prof Mayank Shrivastava’s group at the Department of Electronic Systems Engineering (DESE), IISc. Solutions arising from this research will be deployed in Samsung’s advanced process nodes.

Commenting on the collaboration, Balajee Sowrirajan said, “We are glad to partner with IISc to boost semiconductor innovation and envisage developing ESD knowledge along with expertise available in IISc. Our goal is also to increase capacity building through training programs at the postgraduate level, opening up opportunities for students to pursue industry internships, and encourage entrepreneurial ventures by young researchers.”

Meanwhile, Prof Govindan Rangarajan said, “We are excited to collaborate with SSIR in the crucial area of advanced nanoelectronics device research. The partnership reinforces our commitment to strengthen industry-academia engagements that can make a significant impact in the coming years.”