Freescale Semiconductor, the provider of RF power technology for telecom markets, has launched its first RF power amplifier product. The product has been built using gallium nitride (GaN) technology.
The company?s RF power GaN products will initially target the cellular infrastructure market, with potential future applications including avionics, radar, ISM and software-defined radio.
?Freescale?s GaN RF power solutions underscore our technology-agnostic approach to the RF power market,? said Ritu Favre, vice-president and general manager of Freescale?s RF Division. She further added, ?Working with GaN in development since the mid-2000s, we have established an ideal blend of cost-efficiency, performance and reliability, and the time is now right to add GaN-based products to our broad array of RF power amplifier solutions.?
Advantages of using GaN technology in power amplifiers include smaller product form factors, low parasitic loss, elevated power density and higher-frequency operation. Potential GaN cellular applications include quasi-linear, high efficiency (Doherty), high-powered pulsed (non-linear) applications, broadband PAs and switch-mode amplifier configurations.
